1 dual p-channel 30 v (d-s) mosfet feat ures ?t renchfet ? power mo sfet ? aec-q101 qualified c ?1 00 % r g an d uis tested ? no tes a . pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material ). c . parametric verification ongo ing. product summa ry v ds (v ) - 30 r ds (on) ( ? ) a t v gs = - 10 v 0.046 r ds (on) ( ? ) a t v gs = - 4.5 v 0.078 i d (a ) per leg - 5.4 configuration dual s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op v iew 2 3 4 1 absolute maximum ratings (t c = 25 c, unle ss otherwise noted) p a rameter s y mbol limit u nit drain-source voltage v ds - 30 v gate - sou rce voltage v gs 20 continuous drain current t c = 25 c i d - 5. 4 a t c = 125 c - 3.8 continuous source curr ent (diode conduction) i s - 3 p ulsed dr ain current a i dm - 26 s ing le pulse avalanche current l = 0.1 mh i as - 17 s ingle pulse avalanche energy e as 14 mj maximu m power dissipation a t c = 25 c p d 3.3 w t c = 125 c 1.1 oper ating junction and storage temperature range t j , t stg - 55 to + 175 c the rmal resistance ratings p a rameter symb ol limit unit junction- to-ambient p cb mount b r th ja 11 0 c/w junc tion-to-foot (drain) r th jf 45 www.din-tek.jp dt m4 9 53
2 no t e s a. pul se test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c . indepe ndent of operating temperature. ? ? ? ? ? stresses beyo nd those listed under absol ute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifi cat ions (t c = 25 c , unless otherwise noted) pa rameter s ymbol test condi tion s min . typ. max. unit stati c drain-source breakdown voltage v ds v gs = 0 v, i d = - 25 0 a - 30 - - v gate-source threshold voltage v gs(t h) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i d ss v gs = 0 v v ds = - 30 v - - - 1 a v gs = 0 v v ds = - 30 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 30 v, t j = 175 c - - - 150 on-state drain current a i d(o n) v gs = - 10 v v ds ??? - 5 v - 20 - - a drain-source on-state resistance a r ds (on) v gs = - 10 v i d = - 4.9 a - 0.035 0.045 ? v gs = - 10 v i d = - 4.9 a, t j = 125 c - - 0.066 v gs = - 10 v i d = - 4.9 a , t j = 17 5 c - - 0.076 v gs = - 4.5 v i d = - 3.7 a - 0.065 0.078 forward transconductance b g fs v ds = - 15 v, i d = - 4.9 a - 9 - s dyna m ic b input ca pacitance c is s v gs = 0 v v ds = - 25 v, f = 1 mhz - 557 670 pf output capacitance c oss - 126 190 rev erse transfer capacitance c rss - 90 115 total gate charge c q g v gs = - 10 v v ds = - 1 5 v, i d = - 4.9 a -15 2 2 nc gate-source charge c q gs -2 . 1 gate-d rain charge c q gd -3 . 5 - gate resistance r g f = 1 mhz 2.60 5.26 8.50 ? turn-on delay time c t d( on) v dd = - 15 v, r l = 6.8 ? i d ? - 1 a, v ge n = - 10 v, r g = 1 ? -3 5 ns rise time c t r -91 4 tur n-off delay time c t d(of f) -20 3 0 fall time c t f -9 1 4 so ur ce-drain diode ratings and characteristics b pulsed cur rent a i sm --- 2 6a forward voltage v sd i f = - 2 a, v gs = 0 v - - 0.8 - 1.2 v www.din-tek.jp dt m4 9 53
3 typical c h aracteristics (t a = 25 c, unless otherwise noted) output characteristics transf er characteristics capacitance transfer characteristics on-resistance vs. drain current gate charge 0 6 12 18 24 30 0 2 4 6 8 10 i d - d rai n current (a) v d s -dr a in-to- s ource voltage (v) v gs = 10 v thru 6 v v gs = 3 v v gs = 4 v v gs = 5 v 0 2 4 6 8 10 0 1 2 3 4 5 i d - d rai n current (a) v gs - g ate-to- s ource vol t age (v) t c = 25 c t c = 1 2 5 c t c = - 5 5 c 0 200 400 600 800 1000 0 5 10 15 20 25 30 c - c apacitance (pf) v d s -dr a in-to- s ource voltage (v) c i ss c o ss c r ss 0 6 12 18 24 30 0 2 4 6 8 10 i d - d rai n current (a) v gs - g ate-to- s ource v o ltage (v) t c = 125 c t c = - 5 5 c t = 25 c c 0.00 0.03 0.06 0.09 0.12 0.15 0 6 12 18 24 30 r d s (on ) -on- re s i s tance () i d -dra in current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 3 6 9 12 15 v gs - g ate-to- s ource v o ltage (v) q g -to t al g ate charge (nc) i d = 4.9 a v d s = 15 v www.din-tek.jp dt m4 9 53
4 typical c h aracteristics (t a = 25 c, unless otherwise noted) on -r esistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs. junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on ) -on - re s i s tance (normalized) t j - j uncti on temperature ( c) i d = 4.9 a v gs = 10 v v gs = 4.5 v 0.00 0.05 0.10 0.15 0.20 0.25 024681 0 r d s (on ) -on- re s i s tance () v gs - g ate-to- s ource v o ltage (v) t j = 150 c t j = 25 c 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a ) v s d - s ource- to- d rain voltage (v) t j = 150 c t j = 25 c -0. 5 -0 .2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -te m perature ( c) i d = 250 a i d = 5 m a -40 -3 8 -3 6 -34 -32 -30 - 50 - 25 0 25 50 75 100 125 150 175 v d s -dr a in-to- s ource voltage (v) t j - j uncti on temperature ( c) i d = 1 m a www.din-tek.jp dt m4 9 53
5 ther ma l ratings (t a = 25 c, unless otherwise noted) saf e o perating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - d rai n current (a) v d s -dr a in-to- s ource voltage (v) * v gs > mini mum v gs at which r d s (on) i s s pecified 100 m s limited by r d s (on) * 1 m s i dm limited t c = 25 c s ing le pul s e bvd ss li mi ted 10 m s 100 s 1 s 10 s , dc 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wa v e pulse duration (s) normaliz ed ef f ective transient thermal impedance 1. duty cycle , d = 2. per unit base = r th j a = 110 c/w 3. t jm - t a = p dm z thj a (t ) t 1 t 2 t 1 t 2 notes: 4. surf ace mounted p dm 100 www.din-tek.jp dt m4 9 53
6 ther ma l ratings (t a = 25 c, unless otherwise noted) normal ized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction-to-ambient (25 c) ? - normalized transient thermal impedance junction-to-foot (25 c) ? are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 -3 10 -2 11 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) normaliz ed ef f ective transient thermal impedance www.din-tek.jp dt m4 9 53
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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